3 продукты
ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
EPC2101
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
31,020
Сегодня корабль + бесплатная ночная доставка
EPC TRANS GAN ASYMMETRICAL HALF BRID eGaN® Active Digi-Reel® -40°C ~ 150°C (TJ) Surface Mount Die - 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 60V 9.5A, 38A 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V 2.5V @ 3mA, 2.5V @ 12mA 2.7nC @ 5V, 12nC @ 5V 300pF @ 30V, 1200pF @ 30V
EPC2101
За единицу
$4.55
RFQ
30,520
Сегодня корабль + бесплатная ночная доставка
EPC TRANS GAN ASYMMETRICAL HALF BRID eGaN® Active Cut Tape (CT) -40°C ~ 150°C (TJ) Surface Mount Die - 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 60V 9.5A, 38A 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V 2.5V @ 3mA, 2.5V @ 12mA 2.7nC @ 5V, 12nC @ 5V 300pF @ 30V, 1200pF @ 30V
EPC2101
За единицу
$2.74
RFQ
25,920
Сегодня корабль + бесплатная ночная доставка
EPC TRANS GAN ASYMMETRICAL HALF BRID eGaN® Active Tape & Reel (TR) -40°C ~ 150°C (TJ) Surface Mount Die - 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 60V 9.5A, 38A 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V 2.5V @ 3mA, 2.5V @ 12mA 2.7nC @ 5V, 12nC @ 5V 300pF @ 30V, 1200pF @ 30V