- Packaging :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
68,920
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EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | 5V | +6V, -4V | ||
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68,480
One step to sell excess stocks.Or submit Qty to get quotes
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | 5V | +6V, -4V | |||
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72,160
One step to sell excess stocks.Or submit Qty to get quotes
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | 5V | +6V, -4V | |||
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GET PRICE |
73,000
One step to sell excess stocks.Or submit Qty to get quotes
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | - | - | ||
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29,640
One step to sell excess stocks.Or submit Qty to get quotes
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | - | - | |||
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21,720
One step to sell excess stocks.Or submit Qty to get quotes
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | - | - |
