- Series :
- Part Status :
- Packaging :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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43,640
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Infineon Technologies | MOSFET P-CH 60V 80A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V | ||
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15,660
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|
Infineon Technologies | MOSFET P-CH 60V 80A TO-220AB | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V | ||
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GET PRICE |
30,440
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Infineon Technologies | MOSFET P-CH 60V 80A TO-263 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V | ||
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37,720
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|
Infineon Technologies | MOSFET P-CH 60V 80A TO-263 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V | |||
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|
56,720
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|
Infineon Technologies | MOSFET P-CH 60V 80A TO-263 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V | |||
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49,580
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|
Infineon Technologies | MOSFET N-CH 75V 120A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 340W (Tc) | N-Channel | - | 75V | 120A (Tc) | 3.3 mOhm @ 75A, 10V | 4V @ 250µA | 220nC @ 10V | 9400pF @ 50V | 10V | ±20V | |||
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72,720
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|
Infineon Technologies | MOSFET P-CH 60V 80A TO-220 | SIPMOS® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V |