- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
13 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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21,080
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|
Infineon Technologies | MOSFET N-CH 20V 39A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 57W (Tc) | N-Channel | - | 20V | 39A (Tc) | 20 mOhm @ 23A, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | 4.5V, 7V | ±10V | ||
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76,360
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|
Infineon Technologies | MOSFET N-CH 55V 53A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 107W (Tc) | N-Channel | - | 55V | 39A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | |||
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28,920
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|
Infineon Technologies | MOSFET N-CH 20V 39A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 57W (Tc) | N-Channel | - | 20V | 39A (Tc) | 20 mOhm @ 23A, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | 4.5V, 7V | ±10V | ||
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74,560
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|
Infineon Technologies | MOSFET N-CH 20V 39A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 57W (Tc) | N-Channel | - | 20V | 39A (Tc) | 20 mOhm @ 23A, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | 4.5V, 7V | ±10V | ||
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43,600
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|
Infineon Technologies | MOSFET N-CH 20V 39A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 57W (Tc) | N-Channel | - | 20V | 39A (Tc) | 20 mOhm @ 23A, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | 4.5V, 7V | ±10V | ||
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GET PRICE |
66,740
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|
Infineon Technologies | MOSFET N-CH 20V 39A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 57W (Tc) | N-Channel | - | 20V | 39A (Tc) | 20 mOhm @ 23A, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | 4.5V, 7V | ±10V | ||
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|
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74,280
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|
Infineon Technologies | MOSFET N-CH 20V 39A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 57W (Tc) | N-Channel | - | 20V | 39A (Tc) | 20 mOhm @ 23A, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | 4.5V, 7V | ±10V | ||
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GET PRICE |
61,380
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|
Infineon Technologies | MOSFET N-CH 20V 39A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 57W (Tc) | N-Channel | - | 20V | 39A (Tc) | 20 mOhm @ 23A, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | 4.5V, 7V | ±10V | ||
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|
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39,700
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|
Infineon Technologies | MOSFET N-CH 60V 39A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 43W (Tc) | N-Channel | - | 60V | 39A (Tc) | 12 mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | 1985pF @ 25V | 10V | ±20V | ||
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38,020
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|
Infineon Technologies | MOSFET N-CH 4VSON | CoolMOS™ P7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 154W (Tc) | N-Channel | - | 650V | 39A (Tc) | 85 mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | 2180pF @ 400V | 10V | ±20V | ||
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19,140
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|
Infineon Technologies | MOSFET N-CH 4VSON | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 154W (Tc) | N-Channel | - | 650V | 39A (Tc) | 85 mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | 2180pF @ 400V | 10V | ±20V | |||
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|
77,080
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|
Infineon Technologies | MOSFET N-CH 4VSON | CoolMOS™ P7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 154W (Tc) | N-Channel | - | 650V | 39A (Tc) | 85 mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | 2180pF @ 400V | 10V | ±20V | |||
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21,360
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|
Infineon Technologies | MOSFET N-CH 650V 39A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 313W (Tc) | N-Channel | - | 650V | 39A (Tc) | 75 mOhm @ 26A, 10V | 3.5V @ 1.7mA | 116nC @ 10V | 4000pF @ 100V | 10V | ±20V |