Package / Case :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPZ60R070P6FKSA1
Per Unit
$2.99
RFQ
48,140
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 600V TO247-4 CoolMOS™ P6 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 PG-TO247-4 391W (Tc) N-Channel - 600V 53.5A (Tc) 70 mOhm @ 20.6A, 10V 4.5V @ 1.72mA 100nC @ 10V 4750pF @ 100V 10V ±20V
IPW60R070P6XKSA1
Per Unit
$3.64
RFQ
46,500
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 600V 53.5A TO247-3 CoolMOS™ P6 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 391W (Tc) N-Channel - 600V 53.5A (Tc) 70 mOhm @ 20.6A, 10V 4.5V @ 1.72mA 100nC @ 10V 4750pF @ 100V 10V ±20V
IPW65R070C6FKSA1
Per Unit
$5.28
RFQ
21,300
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 650V 53.5A TO247 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 391W (Tc) N-Channel - 650V 53.5A (Tc) 70 mOhm @ 17.6A, 10V 3.5V @ 1.76mA 170nC @ 10V 3900pF @ 100V 10V ±20V
Page 1 / 1