Supplier Device Package :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BUZ31L H
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RFQ
13,180
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Infineon Technologies MOSFET N-CH 200V 13.5A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 95W (Tc) N-Channel 200V 13.5A (Tc) 200 mOhm @ 7A, 5V 2V @ 1mA - 1600pF @ 25V 5V ±20V
BUZ31L E3044A
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RFQ
79,160
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Infineon Technologies MOSFET N-CH 200V 13.5A TO-220 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 95W (Tc) N-Channel 200V 13.5A (Tc) 200 mOhm @ 7A, 5V 2V @ 1mA - 1600pF @ 25V 5V ±20V
BUZ31L
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RFQ
31,260
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Infineon Technologies MOSFET N-CH 200V 13.5A TO220AB SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 95W (Tc) N-Channel 200V 13.5A (Tc) 200 mOhm @ 7A, 5V 2V @ 1mA - 1600pF @ 25V 5V ±20V
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