- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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67,740
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2.7A VS-8 | U-MOSIII | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 330mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 110 mOhm @ 1.4A, 4.5V | 1.2V @ 200µA | 6nC @ 5V | 470pF @ 10V | 1.8V, 4.5V | ±8V | ||
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GET PRICE |
48,440
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2.7A VS-8 | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 330mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 110 mOhm @ 1.4A, 4.5V | 1.2V @ 200µA | 6nC @ 5V | 470pF @ 10V | 1.8V, 4.5V | ±8V | ||
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GET PRICE |
29,280
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2.7A VS-8 | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 330mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 110 mOhm @ 1.4A, 4.5V | 1.2V @ 200µA | 6nC @ 5V | 470pF @ 10V | 1.8V, 4.5V | ±8V |
