Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHD36N03LT,118
GET PRICE
RFQ
71,080
One step to sell excess stocks.Or submit Qty to get quotes
NXP USA Inc. MOSFET N-CH 30V 43.4A DPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 57.6W (Tc) N-Channel 30V 43.4A (Tc) 17 mOhm @ 25A, 10V 2V @ 250µA 18.5nC @ 10V 690pF @ 25V 4.5V, 10V ±20V
NVD5484NLT4G-VF01
Per Unit
$0.31
RFQ
25,280
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ON Semiconductor MOSFET N-CH 60V 54A DPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 3.9W (Ta), 100W (Tc) N-Channel 60V 10.7A (Ta), 54A (Tc) 17 mOhm @ 25A, 10V 2.5V @ 250µA 48nC @ 10V 1410pF @ 25V 4.5V, 10V ±20V
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