Packaging :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFP260MPBF
Per Unit
$1.65
RFQ
71,860
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 200V 50A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 300W (Tc) N-Channel - 200V 50A (Tc) 40 mOhm @ 28A, 10V 4V @ 250µA 234nC @ 10V 4057pF @ 25V 10V ±20V
IRFP260NPBF
Per Unit
$1.61
RFQ
56,000
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 200V 50A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 300W (Tc) N-Channel - 200V 50A (Tc) 40 mOhm @ 28A, 10V 4V @ 250µA 234nC @ 10V 4057pF @ 25V 10V ±20V
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