2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF1010NLPBF
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RFQ
49,140
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Infineon Technologies MOSFET N-CH 55V 85A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 180W (Tc) N-Channel - 55V 85A (Tc) 11 mOhm @ 43A, 10V 4V @ 250µA 120nC @ 10V 3210pF @ 25V 10V ±20V
IRF1010NL
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RFQ
21,380
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 55V 85A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 180W (Tc) N-Channel - 55V 85A (Tc) 11 mOhm @ 43A, 10V 4V @ 250µA 120nC @ 10V 3210pF @ 25V 10V ±20V
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