- Manufacture :
- Part Status :
- Operating Temperature :
- Package / Case :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
29,460
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|
Infineon Technologies | MOSFET P-CH 55V 31A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 110W (Tc) | P-Channel | - | 55V | 31A (Tc) | 60 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | ||
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GET PRICE |
58,400
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|
Renesas Electronics America | MOSFET N-CH 55V 60A TO-220 | - | Active | Bulk | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | TO-262 | 1.8W (Ta), 105W (Tc) | N-Channel | - | 55V | 60A (Tc) | 6 mOhm @ 30A, 10V | 4V @ 250µA | 63nC @ 10V | 3750pF @ 25V | 10V | ±20V | ||
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GET PRICE |
46,820
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|
Infineon Technologies | MOSFET N-CH 100V 36A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 92W (Tc) | N-Channel | - | 100V | 36A (Tc) | 26.5 mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | 10V | ±20V | ||
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GET PRICE |
14,840
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|
Infineon Technologies | MOSFET P-CH 55V 31A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 110W (Tc) | P-Channel | - | 55V | 31A (Tc) | 60 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | ||
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|
GET PRICE |
70,860
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|
Infineon Technologies | MOSFET N-CH 55V 49A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 94W (Tc) | N-Channel | - | 55V | 49A (Tc) | 17.5 mOhm @ 25A, 10V | 4V @ 250µA | 63nC @ 10V | 1470pF @ 25V | 10V | ±20V | ||
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56,240
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 36A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 92W (Tc) | N-Channel | - | 100V | 36A (Tc) | 26.5 mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | 10V | ±20V | |||
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55,260
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 55V 49A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 94W (Tc) | N-Channel | - | 55V | 49A (Tc) | 17.5 mOhm @ 25A, 10V | 4V @ 250µA | 63nC @ 10V | 1470pF @ 25V | 10V | ±20V |
