- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
54,100
One step to sell excess stocks.Or submit Qty to get quotes
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Infineon Technologies | MOSFET N-CH 800V 1.9A TO252-3 | CoolMOS™ CE | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 42W (Tc) | N-Channel | - | 800V | 1.9A (Tc) | 2.8 Ohm @ 1.1A, 10V | 3.9V @ 120µA | 12nC @ 10V | 290pF @ 100V | 10V | ±20V | ||
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68,700
One step to sell excess stocks.Or submit Qty to get quotes
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Infineon Technologies | MOSFET N-CH 800V 1.9A TO252-3 | CoolMOS™ CE | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 42W (Tc) | N-Channel | - | 800V | 1.9A (Tc) | 2.8 Ohm @ 1.1A, 10V | 3.9V @ 120µA | 12nC @ 10V | 290pF @ 100V | 10V | ±20V | |||
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29,500
One step to sell excess stocks.Or submit Qty to get quotes
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Infineon Technologies | MOSFET N-CH 800V 1.9A TO252-3 | CoolMOS™ CE | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 42W (Tc) | N-Channel | - | 800V | 1.9A (Tc) | 2.8 Ohm @ 1.1A, 10V | 3.9V @ 120µA | 12nC @ 10V | 290pF @ 100V | 10V | ±20V |
