- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
5 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Mounting Type | Package / Case | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | |
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44,700
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 1A SAWN ON FOIL | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | Surface Mount | Die | Sawn on foil | N-Channel | 100V | 1A (Tj) | 100 mOhm @ 2A, 10V | 3.5V @ 33µA | 10V | |||
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30,020
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 1A SAWN ON FOIL | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | Surface Mount | Die | Sawn on foil | N-Channel | 100V | 1A (Tj) | 100 mOhm @ 2A, 4.5V | 2.1V @ 33µA | 4.5V | |||
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77,260
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 1A SAWN ON FOIL | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | Surface Mount | Die | Sawn on foil | N-Channel | 100V | 1A (Tj) | 100 mOhm @ 2A, 10V | 3.5V @ 302µA | 10V | |||
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56,160
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 1A SAWN ON FOIL | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | Surface Mount | Die | Sawn on foil | N-Channel | 100V | 1A (Tj) | 100 mOhm @ 2A, 10V | 3.5V @ 150µA | 10V | |||
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53,240
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 1A SAWN ON FOIL | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | Surface Mount | Die | Sawn on foil | N-Channel | 100V | 1A (Tj) | 100 mOhm @ 2A, 4.5V | 2.1V @ 12µA | 4.5V |