- Manufacture :
- Series :
- Operating Temperature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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52,020
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 100V 81A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 210W (Tc) | N-Channel | - | 100V | 81A (Tc) | 10 mOhm @ 40A, 10V | 4V @ 250µA | 154nC @ 10V | 3900pF @ 30V | 10V | ±20V | |||
|
|
15,160
One step to sell excess stocks.Or submit Qty to get quotes
|
STMicroelectronics | MOSFET N-CH 600V 28A | MDmesh™ DM2 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 210W (Tc) | N-Channel | - | 600V | 28A (Tc) | 110 mOhm @ 14A, 10V | 5V @ 250µA | 54nC @ 10V | 2400pF @ 100V | 10V | ±25V | |||
|
|
73,560
One step to sell excess stocks.Or submit Qty to get quotes
|
STMicroelectronics | MOSFET N-CH 650V 35A TO220 | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 210W (Tc) | N-Channel | - | 650V | 35A (Tc) | 78 mOhm @ 19.5A, 10V | 5V @ 250µA | 91nC @ 10V | 3375pF @ 100V | 10V | ±25V |
