Packaging :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FCP22N60N-F102
Per Unit
$2.04
RFQ
78,780
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 22A TO220-3 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 205W (Tc) N-Channel 600V 22A (Tc) 165 mOhm @ 11A, 10V 4V @ 250µA 45nC @ 10V 1950pF @ 100V 10V ±45V
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Per Unit
$0.48
RFQ
60,740
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CHANNEL 80V 80A TO220 STripFET™ F7 Active - MOSFET (Metal Oxide) - Through Hole TO-220-3 TO-220 205W (Tc) N-Channel 80V 80A (Tc) - - - - 4.5V, 10V -
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