- Manufacture :
- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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16,580
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 500V 13A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 52W (Tc) | N-Channel | - | 500V | 13A (Tc) | 480 mOhm @ 6.5A, 10V | 4V @ 250µA | 31nC @ 10V | 1965pF @ 25V | 10V | ±30V | ||
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53,180
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|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 18A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 33.8W (Tc) | N-Channel | - | 600V | 18A (Tc) | 190 mOhm @ 6A, 10V | 4V @ 250µA | 31nC @ 10V | 1273pF @ 100V | 10V | ±30V | |||
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28,260
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|
STMicroelectronics | MOSFET N-CH 650V 15A TO-220 | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 110W (Tc) | N-Channel | - | 650V | 15A (Tc) | 220 mOhm @ 7.5A, 10V | 5V @ 250µA | 31nC @ 10V | 1240pF @ 100V | 10V | ±25V |
