3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI7621DN-T1-GE3
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RFQ
72,060
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Vishay Siliconix MOSFET P-CH 20V 4A 1212-8 PPAK TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.1W (Ta), 12.5W (Tc) P-Channel - 20V 4A (Tc) 90 mOhm @ 3.9A, 4.5V 2V @ 250µA 6.2nC @ 5V 300pF @ 10V 2.5V, 4.5V ±12V
SI7621DN-T1-GE3
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RFQ
26,260
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Vishay Siliconix MOSFET P-CH 20V 4A 1212-8 PPAK TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.1W (Ta), 12.5W (Tc) P-Channel - 20V 4A (Tc) 90 mOhm @ 3.9A, 4.5V 2V @ 250µA 6.2nC @ 5V 300pF @ 10V 2.5V, 4.5V ±12V
SI7621DN-T1-GE3
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RFQ
58,100
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Vishay Siliconix MOSFET P-CH 20V 4A 1212-8 PPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.1W (Ta), 12.5W (Tc) P-Channel - 20V 4A (Tc) 90 mOhm @ 3.9A, 4.5V 2V @ 250µA 6.2nC @ 5V 300pF @ 10V 2.5V, 4.5V ±12V
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