Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FA57SA50LC
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RFQ
61,880
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Vishay Semiconductor Diodes Division MOSFET N-CH 500V 57A SOT-227 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 625W (Tc) N-Channel - 500V 57A (Tc) 80 mOhm @ 34A, 10V 4V @ 250µA 338nC @ 10V 10000pF @ 25V 10V ±20V
FA38SA50LC
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RFQ
62,560
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Vishay Semiconductor Diodes Division MOSFET N-CH 500V 38A SOT-227 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 500W (Tc) N-Channel - 500V 38A (Tc) 130 mOhm @ 23A, 10V 4V @ 250µA 420nC @ 10V 6900pF @ 25V 10V ±20V
FB180SA10
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RFQ
55,280
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Vishay Semiconductor Diodes Division MOSFET N-CH 100V 180A SOT-227 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 480W (Tc) N-Channel - 100V 180A (Tc) 6.5 mOhm @ 108A, 10V 4V @ 250µA 380nC @ 10V 10700pF @ 25V 10V ±20V
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