- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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22,940
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 250V 93A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 520W (Tc) | N-Channel | - | 250V | 93A (Tc) | 17.5 mOhm @ 56A, 10V | 5V @ 250µA | 270nC @ 10V | 10880pF @ 50V | 10V | ±20V | |||
|
|
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64,260
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 195A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 520W (Tc) | N-Channel | - | 100V | 195A (Tc) | 2.6 mOhm @ 180A, 10V | 4V @ 250µA | 540nC @ 10V | 19860pF @ 50V | 10V | ±20V | |||
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|
|
54,560
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 75V 195A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 520W (Tc) | N-Channel | - | 75V | 195A (Tc) | 1.85 mOhm @ 195A, 10V | 4V @ 250µA | 570nC @ 10V | 19230pF @ 50V | 10V | ±20V | |||
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|
|
47,360
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 200V 130A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 520W (Tc) | N-Channel | - | 200V | 130A (Tc) | 9.7 mOhm @ 81A, 10V | 5V @ 250µA | 241nC @ 10V | 10720pF @ 50V | 10V | ±30V |
