2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRLU3103PBF
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RFQ
74,240
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 55A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 107W (Tc) N-Channel - 30V 55A (Tc) 19 mOhm @ 33A, 10V 1V @ 250µA 50nC @ 4.5V 1600pF @ 25V 4.5V, 10V ±16V
IRLU3103
GET PRICE
RFQ
73,400
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 55A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 107W (Tc) N-Channel - 30V 55A (Tc) 19 mOhm @ 33A, 10V 1V @ 250µA 50nC @ 4.5V 1600pF @ 25V 4.5V, 10V ±16V
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