Transistors - FETs, MOSFETs - Single - EGchip

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15 products

IMAGE	PART NO.	PRICE (reference only)	QUANTITY		STOCK	Mfr.	DESCRIPTION	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
	IRFH6200TR2PBF		GET PRICE	PDF RFQ	73,580 One step to sell excess stocks.Or submit Qty to get quotes	Infineon Technologies	MOSFET N-CH 20V 100A 5X6 PQFN	HEXFET®	Obsolete	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PQFN (5x6)	3.6W (Ta), 156W (Tc)	N-Channel	-	20V	49A (Ta), 100A (Tc)	0.95 mOhm @ 50A, 10V	1.1V @ 150µA	230nC @ 4.5V	10890pF @ 10V	2.5V, 10V	±12V
	IRFH6200TR2PBF		GET PRICE	PDF RFQ	69,420 One step to sell excess stocks.Or submit Qty to get quotes	Infineon Technologies	MOSFET N-CH 20V 100A 5X6 PQFN	HEXFET®	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PQFN (5x6)	3.6W (Ta), 156W (Tc)	N-Channel	-	20V	49A (Ta), 100A (Tc)	0.95 mOhm @ 50A, 10V	1.1V @ 150µA	230nC @ 4.5V	10890pF @ 10V	2.5V, 10V	±12V
	IRLHM630TR2PBF		GET PRICE	PDF RFQ	48,680 One step to sell excess stocks.Or submit Qty to get quotes	Infineon Technologies	MOSFET N-CH 30V 21A PQFN	HEXFET®	Obsolete	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-VQFN Exposed Pad	PQFN (3x3)	2.7W (Ta), 37W (Tc)	N-Channel	-	30V	21A (Ta), 40A (Tc)	3.5 mOhm @ 20A, 4.5V	1.1V @ 50µA	62nC @ 4.5V	3170pF @ 25V	2.5V, 10V	±12V
	IRLHM630TR2PBF		GET PRICE	PDF RFQ	60,040 One step to sell excess stocks.Or submit Qty to get quotes	Infineon Technologies	MOSFET N-CH 30V 21A PQFN	HEXFET®	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-VQFN Exposed Pad	PQFN (3x3)	2.7W (Ta), 37W (Tc)	N-Channel	-	30V	21A (Ta), 40A (Tc)	3.5 mOhm @ 20A, 4.5V	1.1V @ 50µA	62nC @ 4.5V	3170pF @ 25V	2.5V, 10V	±12V
	IRLHM620TR2PBF		GET PRICE	PDF RFQ	57,260 One step to sell excess stocks.Or submit Qty to get quotes	Infineon Technologies	MOSFET N-CH 20V 26A PQFN	HEXFET®	Obsolete	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-VQFN Exposed Pad	PQFN (3x3)	2.7W (Ta), 37W (Tc)	N-Channel	-	20V	26A (Ta), 40A (Tc)	2.5 mOhm @ 20A, 4.5V	1.1V @ 50µA	78nC @ 4.5V	3620pF @ 10V	2.5V, 10V	±12V
	IRLHM620TR2PBF		GET PRICE	PDF RFQ	46,140 One step to sell excess stocks.Or submit Qty to get quotes	Infineon Technologies	MOSFET N-CH 20V 26A PQFN	HEXFET®	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-VQFN Exposed Pad	PQFN (3x3)	2.7W (Ta), 37W (Tc)	N-Channel	-	20V	26A (Ta), 40A (Tc)	2.5 mOhm @ 20A, 4.5V	1.1V @ 50µA	78nC @ 4.5V	3620pF @ 10V	2.5V, 10V	±12V
	IRFH6200TRPBF		GET PRICE	PDF RFQ	40,480 One step to sell excess stocks.Or submit Qty to get quotes	Infineon Technologies	MOSFET N-CH 20V 45A 8-PQFN	HEXFET®	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PQFN (5x6)	3.6W (Ta), 156W (Tc)	N-Channel	-	20V	49A (Ta), 100A (Tc)	0.95 mOhm @ 50A, 10V	1.1V @ 150µA	230nC @ 4.5V	10890pF @ 10V	2.5V, 10V	±12V
	IRFH6200TRPBF	Per Unit $0.95		PDF RFQ	44,040 One step to sell excess stocks.Or submit Qty to get quotes	Infineon Technologies	MOSFET N-CH 20V 45A 8-PQFN	HEXFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PQFN (5x6)	3.6W (Ta), 156W (Tc)	N-Channel	-	20V	49A (Ta), 100A (Tc)	0.95 mOhm @ 50A, 10V	1.1V @ 150µA	230nC @ 4.5V	10890pF @ 10V	2.5V, 10V	±12V
	IRFH6200TRPBF	Per Unit $0.40		PDF RFQ	45,300 One step to sell excess stocks.Or submit Qty to get quotes	Infineon Technologies	MOSFET N-CH 20V 45A 8-PQFN	HEXFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PQFN (5x6)	3.6W (Ta), 156W (Tc)	N-Channel	-	20V	49A (Ta), 100A (Tc)	0.95 mOhm @ 50A, 10V	1.1V @ 150µA	230nC @ 4.5V	10890pF @ 10V	2.5V, 10V	±12V
	IRLHM620TRPBF		GET PRICE	PDF RFQ	75,800 One step to sell excess stocks.Or submit Qty to get quotes	Infineon Technologies	MOSFET N-CH 20V 26A PQFN	HEXFET®	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PQFN (3x3)	2.7W (Ta), 37W (Tc)	N-Channel	-	20V	26A (Ta), 40A (Tc)	2.5 mOhm @ 20A, 4.5V	1.1V @ 50µA	78nC @ 4.5V	3620pF @ 10V	2.5V, 10V	±12V
	IRLHM620TRPBF	Per Unit $0.57		PDF RFQ	49,760 One step to sell excess stocks.Or submit Qty to get quotes	Infineon Technologies	MOSFET N-CH 20V 26A PQFN	HEXFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PQFN (3x3)	2.7W (Ta), 37W (Tc)	N-Channel	-	20V	26A (Ta), 40A (Tc)	2.5 mOhm @ 20A, 4.5V	1.1V @ 50µA	78nC @ 4.5V	3620pF @ 10V	2.5V, 10V	±12V
	IRLHM620TRPBF	Per Unit $0.22		PDF RFQ	73,780 One step to sell excess stocks.Or submit Qty to get quotes	Infineon Technologies	MOSFET N-CH 20V 26A PQFN	HEXFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PQFN (3x3)	2.7W (Ta), 37W (Tc)	N-Channel	-	20V	26A (Ta), 40A (Tc)	2.5 mOhm @ 20A, 4.5V	1.1V @ 50µA	78nC @ 4.5V	3620pF @ 10V	2.5V, 10V	±12V
	IRLHM630TRPBF		GET PRICE	PDF RFQ	59,800 One step to sell excess stocks.Or submit Qty to get quotes	Infineon Technologies	MOSFET N-CH 30V 21A PQFN	HEXFET®	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-VQFN Exposed Pad	-	2.7W (Ta), 37W (Tc)	N-Channel	-	30V	21A (Ta), 40A (Tc)	3.5 mOhm @ 20A, 4.5V	1.1V @ 50µA	62nC @ 4.5V	3170pF @ 25V	2.5V, 10V	±12V
	IRLHM630TRPBF	Per Unit $0.57		PDF RFQ	67,420 One step to sell excess stocks.Or submit Qty to get quotes	Infineon Technologies	MOSFET N-CH 30V 21A PQFN	HEXFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-VQFN Exposed Pad	-	2.7W (Ta), 37W (Tc)	N-Channel	-	30V	21A (Ta), 40A (Tc)	3.5 mOhm @ 20A, 4.5V	1.1V @ 50µA	62nC @ 4.5V	3170pF @ 25V	2.5V, 10V	±12V
	IRLHM630TRPBF	Per Unit $0.22		PDF RFQ	33,400 One step to sell excess stocks.Or submit Qty to get quotes	Infineon Technologies	MOSFET N-CH 30V 21A PQFN	HEXFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-VQFN Exposed Pad	PQFN (3x3)	2.7W (Ta), 37W (Tc)	N-Channel	-	30V	21A (Ta), 40A (Tc)	3.5 mOhm @ 20A, 4.5V	1.1V @ 50µA	62nC @ 4.5V	3170pF @ 25V	2.5V, 10V	±12V

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