- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
11 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
21,740
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 40A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 93W (Tc) | N-Channel | - | 100V | 40A (Ta) | 18 mOhm @ 20A, 10V | 4V @ 1mA | 61nC @ 10V | 3110pF @ 10V | 10V | ±20V | ||
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26,000
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 35A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 58W (Tc) | N-Channel | - | 40V | 35A (Ta) | 10.3 mOhm @ 17.5A, 10V | 3V @ 1mA | 28nC @ 10V | 1370pF @ 10V | 6V, 10V | ±20V | |||
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57,640
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 30A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 58W (Tc) | N-Channel | - | 60V | 30A (Ta) | 18 Ohm @ 15A, 10V | 3V @ 1mA | 28nC @ 10V | 1350pF @ 10V | 6V, 10V | ±20V | |||
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26,380
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 80A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | N-Channel | - | 60V | 80A (Ta) | 5.5 mOhm @ 40A, 10V | 3V @ 1mA | 85nC @ 10V | 4200pF @ 10V | 6V, 10V | ±20V | |||
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53,180
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 80A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | N-Channel | - | 40V | 80A (Ta) | 3.1 mOhm @ 40A, 10V | 3V @ 1mA | 87nC @ 10V | 4340pF @ 10V | 6V, 10V | ±20V | |||
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57,780
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 20A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 38W (Tc) | N-Channel | - | 60V | 20A (Ta) | 29 mOhm @ 10A, 10V | 3V @ 1mA | 18nC @ 10V | 780pF @ 10V | 6V, 10V | ±20V | |||
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44,340
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 20A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 38W (Tc) | N-Channel | - | 40V | 20A (Ta) | 14 mOhm @ 10A, 10V | 3V @ 1mA | 18nC @ 10V | 820pF @ 10V | 6V, 10V | ±20V | |||
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56,100
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 8A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 25W (Tc) | N-Channel | - | 60V | 8A (Ta) | 54 mOhm @ 4A, 10V | 3V @ 1mA | 10nC @ 10V | 400pF @ 10V | 6V, 10V | ±20V | |||
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12,060
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 10A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 25W (Tc) | N-Channel | - | 40V | 10A (Ta) | 28 mOhm @ 5A, 10V | 3V @ 1mA | 10nC @ 10V | 410pF @ 10V | 6V, 10V | ±20V | |||
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45,660
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 65A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 88W (Tc) | N-Channel | - | 40V | 65A (Ta) | 4.5 mOhm @ 32.5A, 10V | 3V @ 1mA | 63nC @ 10V | 2800pF @ 10V | 6V, 10V | ±20V | |||
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18,660
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 60A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 88W (Tc) | N-Channel | - | 60V | 60A (Ta) | 8 mOhm @ 30A, 10V | 3V @ 1mA | 60nC @ 10V | 2900pF @ 10V | 6V, 10V | ±20V |
