- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
66,040
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|
Infineon Technologies | MOSFET N-CH 560V 16A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 160W (Tc) | N-Channel | - | 560V | 16A (Tc) | 280 mOhm @ 10A, 10V | 3.9V @ 675µA | 66nC @ 10V | 1600pF @ 25V | 10V | ±20V | ||
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GET PRICE |
68,600
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|
Infineon Technologies | MOSFET N-CH 560V 1.8A DPAK | CoolMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 25W (Tc) | N-Channel | - | 560V | 1.8A (Tc) | 3 Ohm @ 1.1A, 10V | 3.9V @ 80µA | 9nC @ 10V | 190pF @ 25V | 10V | ±20V | ||
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GET PRICE |
17,620
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|
Infineon Technologies | MOSFET N-CH 560V 11.6A TO-220 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 125W (Tc) | N-Channel | - | 560V | 11.6A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 49nC @ 10V | 1200pF @ 25V | 10V | ±20V | ||
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GET PRICE |
17,360
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|
Infineon Technologies | MOSFET N-CH 560V 16A TO-220AB | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 160W (Tc) | N-Channel | - | 560V | 16A (Tc) | 280 mOhm @ 10A, 10V | 3.9V @ 675µA | 66nC @ 10V | 1600pF @ 25V | 10V | ±20V | ||
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GET PRICE |
70,860
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|
Infineon Technologies | MOSFET N-CH 560V 21A TO-220AB | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 208W (Tc) | N-Channel | - | 560V | 21A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | 10V | ±20V | ||
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GET PRICE |
40,380
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|
Infineon Technologies | MOSFET N-CH 560V 4.5A TO-220AB | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 50W (Tc) | N-Channel | - | 560V | 4.5A (Tc) | 950 mOhm @ 2.8A, 10V | 3.9V @ 200µA | 22nC @ 10V | 470pF @ 25V | 10V | ±20V | ||
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GET PRICE |
69,720
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|
Infineon Technologies | MOSFET N-CH 560V 4.5A TO220FP | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 31W (Tc) | N-Channel | - | 560V | 4.5A (Tc) | 950 mOhm @ 2.8A, 10V | 3.9V @ 200µA | 22nC @ 10V | 470pF @ 25V | 10V | ±20V | ||
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GET PRICE |
21,940
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|
Infineon Technologies | MOSFET N-CH 560V 11.6A TO-247 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 125W (Tc) | N-Channel | - | 560V | 11.6A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 49nC @ 10V | 1200pF @ 25V | 10V | ±20V | ||
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GET PRICE |
74,920
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|
Infineon Technologies | MOSFET N-CH 560V 4.5A DPAK | CoolMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 50W (Tc) | N-Channel | - | 560V | 4.5A (Tc) | 950 mOhm @ 2.8A, 10V | 3.9V @ 200µA | 22nC @ 10V | 470pF @ 25V | 10V | ±20V |
