3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIR640DP-T1-GE3
GET PRICE
RFQ
25,220
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 40V 60A (Tc) 1.7 mOhm @ 20A, 10V 2.3V @ 250µA 113nC @ 10V 4930pF @ 20V 4.5V, 10V ±20V
SIR640DP-T1-GE3
GET PRICE
RFQ
62,660
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 40V 60A (Tc) 1.7 mOhm @ 20A, 10V 2.3V @ 250µA 113nC @ 10V 4930pF @ 20V 4.5V, 10V ±20V
SIR640DP-T1-GE3
GET PRICE
RFQ
18,040
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 40V 60A (Tc) 1.7 mOhm @ 20A, 10V 2.3V @ 250µA 113nC @ 10V 4930pF @ 20V 4.5V, 10V ±20V
Page 1 / 1