3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PSMN010-55D,118
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RFQ
18,360
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NXP USA Inc. MOSFET N-CH 55V 75A DPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 125W (Tc) N-Channel - 55V 75A (Tc) 10.5 mOhm @ 25A, 10V 2V @ 1mA 55nC @ 5V 3300pF @ 20V 4.5V, 10V ±15V
IPS12CN10LGBKMA1
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RFQ
72,360
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Infineon Technologies MOSFET N-CH 100V 69A TO251-3-11 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 125W (Tc) N-Channel - 100V 69A (Tc) 11.8 mOhm @ 69A, 10V 2.4V @ 83µA 58nC @ 10V 5600pF @ 50V 4.5V, 10V ±20V
IPI70N10S3L12AKSA1
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RFQ
47,740
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Infineon Technologies MOSFET N-CH 100V 70A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 125W (Tc) N-Channel - 100V 70A (Tc) 12.1 mOhm @ 70A, 10V 2.4V @ 83µA 80nC @ 10V 5550pF @ 25V 4.5V, 10V ±20V
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