- Manufacture :
- Series :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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18,360
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NXP USA Inc. | MOSFET N-CH 55V 75A DPAK | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 125W (Tc) | N-Channel | - | 55V | 75A (Tc) | 10.5 mOhm @ 25A, 10V | 2V @ 1mA | 55nC @ 5V | 3300pF @ 20V | 4.5V, 10V | ±15V | |||
|
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72,360
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|
Infineon Technologies | MOSFET N-CH 100V 69A TO251-3-11 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 125W (Tc) | N-Channel | - | 100V | 69A (Tc) | 11.8 mOhm @ 69A, 10V | 2.4V @ 83µA | 58nC @ 10V | 5600pF @ 50V | 4.5V, 10V | ±20V | |||
|
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47,740
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|
Infineon Technologies | MOSFET N-CH 100V 70A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 125W (Tc) | N-Channel | - | 100V | 70A (Tc) | 12.1 mOhm @ 70A, 10V | 2.4V @ 83µA | 80nC @ 10V | 5550pF @ 25V | 4.5V, 10V | ±20V |