4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SPI80N03S2L-04
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RFQ
15,080
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Infineon Technologies MOSFET N-CH 30V 80A I2PAK OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 188W (Tc) N-Channel - 30V 80A (Tc) 4.2 mOhm @ 80A, 10V 2V @ 130µA 105nC @ 10V 3900pF @ 25V 4.5V, 10V ±20V
SPB80N03S2L-04 G
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RFQ
16,580
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Infineon Technologies MOSFET N-CH 30V 80A D2PAK OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 188W (Tc) N-Channel - 30V 80A (Tc) 3.9 mOhm @ 80A, 10V 2V @ 130µA 105nC @ 10V 3900pF @ 25V 4.5V, 10V ±20V
IPB085N06L G
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RFQ
46,720
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Infineon Technologies MOSFET N-CH 60V 80A TO-263 OptiMOS™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 188W (Tc) N-Channel - 60V 80A (Tc) 8.2 mOhm @ 80A, 10V 2V @ 125µA 104nC @ 10V 3500pF @ 30V 4.5V, 10V ±20V
IPB085N06L G
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RFQ
22,040
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Infineon Technologies MOSFET N-CH 60V 80A TO-263 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 188W (Tc) N-Channel - 60V 80A (Tc) 8.2 mOhm @ 80A, 10V 2V @ 125µA 104nC @ 10V 3500pF @ 30V 4.5V, 10V ±20V
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