- Series :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
56,740
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|
Infineon Technologies | MOSFET N-CH 60V 20A TSDSON-8 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TSDSON-8 | 2.1W (Ta), 78W (Tc) | N-Channel | - | 60V | 14A (Ta), 20A (Tc) | 6.7 mOhm @ 20A, 10V | 2.2V @ 35µA | 62nC @ 10V | 4800pF @ 30V | 4.5V, 10V | ±20V | ||
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|
|
GET PRICE |
49,780
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|
Infineon Technologies | MOSFET N-CH 60V 20A TSDSON-8 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TSDSON-8 | 2.1W (Ta), 78W (Tc) | N-Channel | - | 60V | 14A (Ta), 20A (Tc) | 6.7 mOhm @ 20A, 10V | 2.2V @ 35µA | 62nC @ 10V | 4800pF @ 30V | 4.5V, 10V | ±20V | ||
|
|
GET PRICE |
66,280
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|
Infineon Technologies | MOSFET N-CH 25V 35A DIRECTFET | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 78W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 35A (Ta), 213A (Tc) | 1.1 mOhm @ 35A, 10V | 2.1V @ 100µA | 62nC @ 4.5V | 5435pF @ 13V | 4.5V, 10V | ±16V | ||
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|
|
GET PRICE |
12,620
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 25V 35A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 78W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 35A (Ta), 213A (Tc) | 1.1 mOhm @ 35A, 10V | 2.1V @ 100µA | 62nC @ 4.5V | 5435pF @ 13V | 4.5V, 10V | ±16V | ||
|
|
|
GET PRICE |
14,840
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 25V 35A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 78W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 35A (Ta), 213A (Tc) | 1.1 mOhm @ 35A, 10V | 2.1V @ 100µA | 62nC @ 4.5V | 5435pF @ 13V | 4.5V, 10V | ±16V |
