4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BSP89 E6327
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RFQ
50,600
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Infineon Technologies MOSFET N-CH 240V 350MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 240V 350mA (Ta) 6 Ohm @ 350mA, 10V 1.8V @ 108µA 6.4nC @ 10V 140pF @ 25V 4.5V, 10V ±20V
BSP89L6327HTSA1
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RFQ
78,920
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Infineon Technologies MOSFET N-CH 240V 350MA SOT-223 SIPMOS® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 240V 350mA (Ta) 6 Ohm @ 350mA, 10V 1.8V @ 108µA 6.4nC @ 10V 140pF @ 25V 4.5V, 10V ±20V
BSP89L6327HTSA1
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RFQ
43,200
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Infineon Technologies MOSFET N-CH 240V 350MA SOT-223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 240V 350mA (Ta) 6 Ohm @ 350mA, 10V 1.8V @ 108µA 6.4nC @ 10V 140pF @ 25V 4.5V, 10V ±20V
BSP89L6327HTSA1
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RFQ
77,980
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 240V 350MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 240V 350mA (Ta) 6 Ohm @ 350mA, 10V 1.8V @ 108µA 6.4nC @ 10V 140pF @ 25V 4.5V, 10V ±20V
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