Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI7888DP-T1-GE3
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RFQ
14,640
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Vishay Siliconix MOSFET N-CH 30V 9.4A PPAK SO-8 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 1.8W (Ta) N-Channel - 30V 9.4A (Ta) 12 mOhm @ 12.4A, 10V 2V @ 250µA 10.5nC @ 5V - 4.5V, 10V ±12V
SI7888DP-T1-E3
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RFQ
17,800
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Vishay Siliconix MOSFET N-CH 30V 9.4A PPAK SO-8 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 1.8W (Ta) N-Channel - 30V 9.4A (Ta) 12 mOhm @ 12.4A, 10V 2V @ 250µA 10.5nC @ 5V - 4.5V, 10V ±12V
IRF7468TR
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RFQ
24,540
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Infineon Technologies MOSFET N-CH 40V 9.4A 8-SOIC HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 40V 9.4A (Ta) 15.5 mOhm @ 9.4A, 10V 2V @ 250µA 34nC @ 4.5V 2460pF @ 20V 4.5V, 10V ±12V
IRF7468
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RFQ
25,720
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Infineon Technologies MOSFET N-CH 40V 9.4A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 40V 9.4A (Ta) 15.5 mOhm @ 9.4A, 10V 2V @ 250µA 34nC @ 4.5V 2460pF @ 20V 4.5V, 10V ±12V
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