7 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIR646DP-T1-GE3
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RFQ
13,540
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Vishay Siliconix MOSFET N-CH 40V 60A PPAK 8SO TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 5W (Ta), 54W (Tc) N-Channel - 40V 60A (Tc) 3.8 mOhm @ 20A, 10V 2.2V @ 250µA 51nC @ 10V 2230pF @ 20V 4.5V, 10V ±20V
SIR646DP-T1-GE3
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RFQ
42,080
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Vishay Siliconix MOSFET N-CH 40V 60A PPAK 8SO TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 5W (Ta), 54W (Tc) N-Channel - 40V 60A (Tc) 3.8 mOhm @ 20A, 10V 2.2V @ 250µA 51nC @ 10V 2230pF @ 20V 4.5V, 10V ±20V
SIR646DP-T1-GE3
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RFQ
16,300
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Vishay Siliconix MOSFET N-CH 40V 60A PPAK 8SO TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 5W (Ta), 54W (Tc) N-Channel - 40V 60A (Tc) 3.8 mOhm @ 20A, 10V 2.2V @ 250µA 51nC @ 10V 2230pF @ 20V 4.5V, 10V ±20V
IRF7832ZTR
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RFQ
62,620
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Infineon Technologies MOSFET N-CH 30V 21A 8-SOIC HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 21A (Ta) 3.8 mOhm @ 20A, 10V 2.35V @ 250µA 45nC @ 4.5V 3860pF @ 15V 4.5V, 10V ±20V
IRFHM830TR2PBF
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RFQ
43,720
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Infineon Technologies MOSFET N-CH 30V 21A PQFN HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VQFN Exposed Pad PQFN (3x3) 2.7W (Ta), 37W (Tc) N-Channel - 30V 21A (Ta), 40A (Tc) 3.8 mOhm @ 20A, 10V 2.35V @ 50µA 31nC @ 10V 2155pF @ 25V 4.5V, 10V ±20V
IRFHM830TR2PBF
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RFQ
51,660
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Infineon Technologies MOSFET N-CH 30V 21A PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VQFN Exposed Pad PQFN (3x3) 2.7W (Ta), 37W (Tc) N-Channel - 30V 21A (Ta), 40A (Tc) 3.8 mOhm @ 20A, 10V 2.35V @ 50µA 31nC @ 10V 2155pF @ 25V 4.5V, 10V ±20V
IRF7832Z
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RFQ
65,820
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Infineon Technologies MOSFET N-CH 30V 21A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 21A (Ta) 3.8 mOhm @ 20A, 10V 2.35V @ 250µA 45nC @ 4.5V 3860pF @ 15V 4.5V, 10V ±20V
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