Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BUK9528-100A,127
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RFQ
73,860
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NXP USA Inc. MOSFET N-CH 100V 49A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 166W (Tc) N-Channel - 100V 49A (Tc) 27 mOhm @ 25A, 10V 2V @ 1mA - 4293pF @ 25V 4.5V, 10V ±10V
BUK9529-100B,127
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RFQ
54,740
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Nexperia USA Inc. MOSFET N-CH 100V 46A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 157W (Tc) N-Channel - 100V 46A (Tc) 27 mOhm @ 25A, 10V 2V @ 1mA 33nC @ 5V 4360pF @ 25V 4.5V, 10V ±15V
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