Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI4004DY-T1-GE3
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RFQ
76,020
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Vishay Siliconix MOSFET N-CH 20V 12A 8-SOIC TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 5W (Tc) N-Channel - 20V 12A (Tc) 13.8 mOhm @ 11A, 10V 2.5V @ 250µA 33nC @ 10V 1280pF @ 10V 4.5V, 10V ±20V
SI4004DY-T1-GE3
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RFQ
15,920
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Vishay Siliconix MOSFET N-CH 20V 12A 8-SOIC TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 5W (Tc) N-Channel - 20V 12A (Tc) 13.8 mOhm @ 11A, 10V 2.5V @ 250µA 33nC @ 10V 1280pF @ 10V 4.5V, 10V ±20V
IRF7807Z
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RFQ
53,260
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Infineon Technologies MOSFET N-CH 30V 11A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 11A (Ta) 13.8 mOhm @ 11A, 10V 2.25V @ 250µA 11nC @ 4.5V 770pF @ 15V 4.5V, 10V ±20V
IRF7807ZTR
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RFQ
22,740
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Infineon Technologies MOSFET N-CH 30V 11A 8-SOIC HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 11A (Ta) 13.8 mOhm @ 11A, 10V 2.25V @ 250µA 11nC @ 4.5V 770pF @ 15V 4.5V, 10V ±20V
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