- Series :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
29,420
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|
Infineon Technologies | MOSFET N-CH 30V 11A DIRECTFET-S1 | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 1.7W (Ta), 17W (Tc) | N-Channel | - | 30V | 11A (Ta), 35A (Tc) | 8 mOhm @ 11A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1140pF @ 15V | 4.5V, 10V | ±20V | |||
|
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15,080
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSVI-H | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8 mOhm @ 11A, 10V | 2.3V @ 200µA | 27nC @ 10V | 2200pF @ 10V | 4.5V, 10V | ±20V | |||
|
GET PRICE |
38,240
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSVI-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8 mOhm @ 11A, 10V | 2.3V @ 200µA | 27nC @ 10V | 2200pF @ 10V | 4.5V, 10V | ±20V | |||
|
GET PRICE |
22,000
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSVI-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8 mOhm @ 11A, 10V | 2.3V @ 200µA | 27nC @ 10V | 2200pF @ 10V | 4.5V, 10V | ±20V | |||
|
GET PRICE |
16,700
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|
Infineon Technologies | MOSFET N-CH 30V 11A DIRECTFET | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 1.7W (Ta), 17W (Tc) | N-Channel | - | 30V | 11A (Ta), 35A (Tc) | 8 mOhm @ 11A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1140pF @ 15V | 4.5V, 10V | ±20V | |||
|
GET PRICE |
69,920
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|
Infineon Technologies | MOSFET N-CH 30V 11A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 1.7W (Ta), 17W (Tc) | N-Channel | - | 30V | 11A (Ta), 35A (Tc) | 8 mOhm @ 11A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1140pF @ 15V | 4.5V, 10V | ±20V | |||
|
GET PRICE |
29,780
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 11A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 1.7W (Ta), 17W (Tc) | N-Channel | - | 30V | 11A (Ta), 35A (Tc) | 8 mOhm @ 11A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1140pF @ 15V | 4.5V, 10V | ±20V |