- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
36,680
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 8.3A PS-8 | U-MOSIV | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | - | 30V | 8.3A (Ta) | 8.5 mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26nC @ 10V | 1270pF @ 10V | 4.5V, 10V | ±20V | ||
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GET PRICE |
75,440
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 8.3A PS-8 | U-MOSIV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | - | 30V | 8.3A (Ta) | 8.5 mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26nC @ 10V | 1270pF @ 10V | 4.5V, 10V | ±20V | ||
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GET PRICE |
52,400
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 8.3A PS-8 | U-MOSIV | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | - | 30V | 8.3A (Ta) | 8.5 mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26nC @ 10V | 1270pF @ 10V | 4.5V, 10V | ±20V |
