4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NTP5860NLG
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RFQ
38,540
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ON Semiconductor MOSFET N-CH 60V 220A TO-220-3 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 283W (Tc) N-Channel - 60V 220A (Tc) 3 mOhm @ 75A, 10V 4V @ 250µA 180nC @ 10V 10760pF @ 25V 4.5V, 10V ±20V
SPP100N08S2-07
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RFQ
26,060
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Infineon Technologies MOSFET N-CH 75V 100A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 300W (Tc) N-Channel - 75V 100A (Tc) 7.1 mOhm @ 66A, 10V 4V @ 250µA 200nC @ 10V 6020pF @ 25V 4.5V, 10V ±20V
SPP100N06S2-05
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RFQ
20,500
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Infineon Technologies MOSFET N-CH 55V 100A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 300W (Tc) N-Channel - 55V 100A (Tc) 5 mOhm @ 80A, 10V 4V @ 250µA 170nC @ 10V 6800pF @ 25V 4.5V, 10V ±20V
SI7302DN-T1-GE3
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RFQ
31,100
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Vishay Siliconix MOSFET N-CH 220V 8.4A 1212-8 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 3.8W (Ta), 52W (Tc) N-Channel - 220V 8.4A (Tc) 320 mOhm @ 2.3A, 10V 4V @ 250µA 21nC @ 10V 645pF @ 15V 4.5V, 10V ±20V
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