- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
11 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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15,680
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|
Infineon Technologies | MOSFET N-CH TO220-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 107W (Tc) | N-Channel | 60V | 80A (Tc) | 8.5 mOhm @ 40A, 4.5V | 2.2V @ 60µA | 110nC @ 10V | 8180pF @ 25V | 4.5V, 10V | ±16V | ||
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74,080
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|
Infineon Technologies | MOSFET N-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 107W (Tc) | N-Channel | 60V | 80A (Tc) | 8.5 mOhm @ 40A, 4.5V | 2.2V @ 60µA | 110nC @ 10V | 8180pF @ 25V | 4.5V, 10V | ±16V | ||
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GET PRICE |
77,720
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|
Vishay Siliconix | MOSFET N-CH 100V 60A TO220AB | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | 100V | 60A (Tc) | 16 mOhm @ 30A, 10V | 3V @ 250µA | 110nC @ 10V | 3820pF @ 25V | 4.5V, 10V | ±20V | ||
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GET PRICE |
79,460
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|
Infineon Technologies | MOSFET N-CH 60V 80A TO220-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 107W (Tc) | N-Channel | 60V | 80A (Tc) | 5.1 mOhm @ 80A, 10V | 2.2V @ 60µA | 110nC @ 10V | 8180pF @ 25V | 4.5V, 10V | ±16V | ||
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GET PRICE |
75,600
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|
Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | 60V | 80A (Tc) | 5.1 mOhm @ 80A, 10V | 2.2V @ 60µA | 110nC @ 10V | 8180pF @ 25V | 4.5V, 10V | ±16V | ||
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GET PRICE |
28,720
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|
Vishay Siliconix | MOSFET N-CH 30V 34A 8-SOIC | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.5W (Ta), 7.8W (Tc) | N-Channel | 30V | 34A (Tc) | 3.75 mOhm @ 20A, 10V | 3V @ 1mA | 110nC @ 10V | 5540pF @ 15V | 4.5V, 10V | ±20V | ||
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GET PRICE |
51,160
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|
Vishay Siliconix | MOSFET N-CH 30V 34A 8-SOIC | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.5W (Ta), 7.8W (Tc) | N-Channel | 30V | 34A (Tc) | 3.75 mOhm @ 20A, 10V | 3V @ 1mA | 110nC @ 10V | 5540pF @ 15V | 4.5V, 10V | ±20V | ||
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GET PRICE |
66,480
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|
Vishay Siliconix | MOSFET N-CH 30V 34A 8-SOIC | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.5W (Ta), 7.8W (Tc) | N-Channel | 30V | 34A (Tc) | 3.75 mOhm @ 20A, 10V | 3V @ 1mA | 110nC @ 10V | 5540pF @ 15V | 4.5V, 10V | ±20V | ||
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|
GET PRICE |
35,620
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|
Infineon Technologies | MOSFET N-CH 25V 45A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN | PQFN (5x6) | 3.6W (Ta), 160W (Tc) | N-Channel | 25V | 45A (Ta), 100A (Tc) | 1.15 mOhm @ 50A, 10V | 2.35V @ 150µA | 110nC @ 10V | 7174pF @ 13V | 4.5V, 10V | ±20V | ||
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GET PRICE |
44,860
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|
Infineon Technologies | MOSFET N-CH 25V 45A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN | PQFN (5x6) | 3.6W (Ta), 160W (Tc) | N-Channel | 25V | 45A (Ta), 100A (Tc) | 1.15 mOhm @ 50A, 10V | 2.35V @ 150µA | 110nC @ 10V | 7174pF @ 13V | 4.5V, 10V | ±20V | ||
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|
GET PRICE |
53,040
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 55A TO220W | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220(W) | 140W (Tc) | N-Channel | 100V | 55A (Ta) | 10.5 mOhm @ 27A, 10V | 2.3V @ 1mA | 110nC @ 10V | 5700pF @ 10V | 4.5V, 10V | ±20V |
