Package / Case :
Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BSS225L6327HTSA1
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RFQ
22,720
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Infineon Technologies MOSFET N-CH 600V 0.09A SOT-89 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-243AA PG-SOT89 1W (Ta) N-Channel 600V 90mA (Ta) 45 Ohm @ 90mA, 10V 2.3V @ 94µA 5.8nC @ 10V 131pF @ 25V 4.5V, 10V ±20V
BSS225
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RFQ
48,440
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Infineon Technologies MOSFET N-CH 600V 0.09A SOT-89 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-243AA PG-SOT89 1W (Ta) N-Channel 600V 90mA (Ta) 45 Ohm @ 90mA, 10V 2.3V @ 94µA 5.8nC @ 10V 131pF @ 25V 4.5V, 10V ±20V
ZXMN6A08E6TC
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RFQ
13,480
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Diodes Incorporated MOSFET N-CH 60V 2.8A SOT23-6 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-26 1.1W (Ta) N-Channel 60V 2.8A (Ta) 80 mOhm @ 4.8A, 10V 1V @ 250µA 5.8nC @ 10V 459pF @ 40V 4.5V, 10V ±20V
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