- Series :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
34,040
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|
Infineon Technologies | MOSFET N-CH 25V 100A TDSON-8 | OptiMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.8W (Ta), 104W (Tc) | N-Channel | - | 25V | 30A (Ta), 100A (Tc) | 2 mOhm @ 50A, 10V | 2V @ 110µA | 66nC @ 5V | 8290pF @ 15V | 4.5V, 10V | ±20V | ||
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GET PRICE |
21,180
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|
Infineon Technologies | MOSFET N-CH 25V 100A TDSON-8 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.8W (Ta), 104W (Tc) | N-Channel | - | 25V | 30A (Ta), 100A (Tc) | 2 mOhm @ 50A, 10V | 2V @ 110µA | 66nC @ 5V | 8290pF @ 15V | 4.5V, 10V | ±20V | ||
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|
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GET PRICE |
20,800
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|
Infineon Technologies | MOSFET N-CH 25V 100A TDSON-8 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.8W (Ta), 104W (Tc) | N-Channel | - | 25V | 30A (Ta), 100A (Tc) | 2 mOhm @ 50A, 10V | 2V @ 110µA | 66nC @ 5V | 8290pF @ 15V | 4.5V, 10V | ±20V | ||
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GET PRICE |
40,460
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|
Infineon Technologies | MOSFET N-CH 55V 42A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 130W (Tc) | N-Channel | - | 55V | 42A (Tc) | 8 mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | 2900pF @ 25V | 4.5V, 10V | ±16V | ||
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|
GET PRICE |
37,960
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|
Infineon Technologies | MOSFET N-CH 55V 42A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 130W (Tc) | N-Channel | - | 55V | 42A (Tc) | 8 mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | 2900pF @ 25V | 4.5V, 10V | ±16V | ||
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|
GET PRICE |
35,220
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 55V 42A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 130W (Tc) | N-Channel | - | 55V | 42A (Tc) | 8 mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | 2900pF @ 25V | 4.5V, 10V | ±16V |
