Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PSMN010-55D,118
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RFQ
18,360
One step to sell excess stocks.Or submit Qty to get quotes
NXP USA Inc. MOSFET N-CH 55V 75A DPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 125W (Tc) N-Channel - 55V 75A (Tc) 10.5 mOhm @ 25A, 10V 2V @ 1mA 55nC @ 5V 3300pF @ 20V 4.5V, 10V ±15V
FDS7760A
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RFQ
33,060
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ON Semiconductor MOSFET N-CH 30V 15A 8-SOIC PowerTrench® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 15A (Ta) 5.5 mOhm @ 15A, 10V 3V @ 250µA 55nC @ 5V 3514pF @ 15V 4.5V, 10V ±20V
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