Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPC8A06-H(TE12LQM)
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RFQ
71,420
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 12A 8SOP - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) - Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) - N-Channel Schottky Diode (Body) 30V 12A (Ta) 10.1 mOhm @ 6A, 10V 2.3V @ 1mA 19nC @ 10V 1800pF @ 10V 4.5V, 10V ±20V
TPC8026(TE12L,Q,M)
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RFQ
62,640
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 13A 8-SOIC - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) N-Channel - 30V 13A (Ta) 6.6 mOhm @ 6.5A, 10V 2.5V @ 1mA 42nC @ 10V 1800pF @ 10V 4.5V, 10V ±20V
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