- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
73,660
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|
Infineon Technologies | MOSFET N-CH TO220-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 150W (Tc) | N-Channel | - | 60V | 90A (Tc) | 3.7 mOhm @ 90A, 10V | 2.2V @ 90µA | 170nC @ 10V | 13000pF @ 25V | 4.5V, 10V | ±16V | ||
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|
GET PRICE |
48,460
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|
NXP USA Inc. | MOSFET N-CH 55V 100A SOT429 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 300W (Tc) | N-Channel | - | 55V | 100A (Tc) | 4.2 mOhm @ 25A, 10V | 2V @ 1mA | 226nC @ 5V | 13000pF @ 25V | 4.5V, 10V | ±15V | ||
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|
GET PRICE |
69,480
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 60V 90A TO220-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 150W (Tc) | N-Channel | - | 60V | 90A (Tc) | 3.7 mOhm @ 90A, 10V | 2.2V @ 90µA | 170nC @ 10V | 13000pF @ 25V | 4.5V, 10V | ±16V |
