4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPCC8006-H(TE12LQM
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RFQ
15,080
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSVI-H Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8 mOhm @ 11A, 10V 2.3V @ 200µA 27nC @ 10V 2200pF @ 10V 4.5V, 10V ±20V
TPCC8006-H(TE12LQM
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RFQ
38,240
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSVI-H Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 27W (Tc) N-Channel - 30V 22A (Ta) 8 mOhm @ 11A, 10V 2.3V @ 200µA 27nC @ 10V 2200pF @ 10V 4.5V, 10V ±20V
TPCC8006-H(TE12LQM
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RFQ
22,000
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSVI-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 27W (Tc) N-Channel - 30V 22A (Ta) 8 mOhm @ 11A, 10V 2.3V @ 200µA 27nC @ 10V 2200pF @ 10V 4.5V, 10V ±20V
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RFQ
66,020
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 40A 8SOIC ADV U-MOSIV Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 45W (Tc) N-Channel - 30V 40A (Ta) 3.5 mOhm @ 20A, 10V 2.5V @ 1mA 49nC @ 10V 2200pF @ 10V 4.5V, 10V ±20V
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