3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFH3707TR2PBF
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RFQ
13,420
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Infineon Technologies MOSFET N-CH 30V 12A PQFN33 HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-PQFN (3x3) 2.8W (Ta) N-Channel - 30V 12A (Ta), 29A (Tc) 12.4 mOhm @ 12A, 10V 2.35V @ 25µA 8.1nC @ 4.5V 755pF @ 15V 4.5V, 10V ±20V
IRFH3707TR2PBF
Per Unit
$0.51
RFQ
20,280
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Infineon Technologies MOSFET N-CH 30V 12A PQFN33 HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-PQFN (3x3) 2.8W (Ta) N-Channel - 30V 12A (Ta), 29A (Tc) 12.4 mOhm @ 12A, 10V 2.35V @ 25µA 8.1nC @ 4.5V 755pF @ 15V 4.5V, 10V ±20V
IRFH3707TR2PBF
GET PRICE
RFQ
44,060
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 12A PQFN33 HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-PQFN (3x3) 2.8W (Ta) N-Channel - 30V 12A (Ta), 29A (Tc) 12.4 mOhm @ 12A, 10V 2.35V @ 25µA 8.1nC @ 4.5V 755pF @ 15V 4.5V, 10V ±20V
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