Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIHF22N60E-GE3
Per Unit
$2.33
RFQ
64,140
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 21A TO220 E Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 35W (Tc) N-Channel - 600V 21A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 86nC @ 10V 1920pF @ 100V 10V ±30V
SIHA22N60AE-E3
Per Unit
$2.09
RFQ
12,120
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CHANNEL 600V 20A TO220 E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 33W (Tc) N-Channel - 600V 20A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 96nC @ 10V 1451pF @ 100V 10V ±30V
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