Packaging :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIHA22N60AE-E3
Per Unit
$2.09
RFQ
12,120
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CHANNEL 600V 20A TO220 E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 33W (Tc) N-Channel 600V 20A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 96nC @ 10V 1451pF @ 100V 10V ±30V
SIHA15N65E-GE3
Per Unit
$1.84
RFQ
50,120
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CHANNEL 650V 15A TO220 E Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 34W (Tc) N-Channel 650V 15A (Tc) 280 mOhm @ 8A, 10V 4V @ 250µA 96nC @ 10V 2460pF @ 100V 10V ±30V
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