4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
Per Unit
$0.95
RFQ
56,440
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CHAN 800V TO-220 FULLPA E Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 29W (Tc) N-Channel - 800V 2.8A (Tc) 2.75 Ohm @ 1A, 10V 4V @ 250µA 19.6nC @ 10V 315pF @ 100V 10V ±30V
SIHF30N60E-GE3
Per Unit
$3.54
RFQ
52,260
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 29A TO220 E Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack - 37W (Tc) N-Channel - 600V 29A (Tc) 125 mOhm @ 15A, 10V 4V @ 250µA 130nC @ 10V 2600pF @ 100V 10V ±30V
SIHF12N60E-GE3
Per Unit
$1.67
RFQ
73,880
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 12A TO220 FULLP E Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 33W (Tc) N-Channel - 600V 12A (Tc) 380 mOhm @ 6A, 10V 4V @ 250µA 58nC @ 10V 937pF @ 100V 10V ±30V
SIHF22N60E-GE3
Per Unit
$2.33
RFQ
64,140
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 21A TO220 E Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 35W (Tc) N-Channel - 600V 21A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 86nC @ 10V 1920pF @ 100V 10V ±30V
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