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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
2SK3662(F)
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13,680
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 35A TO220NIS U-MOSIII Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220NIS 35W (Tc) N-Channel - 60V 35A (Ta) 12.5 mOhm @ 18A, 10V 2.5V @ 1mA 91nC @ 10V 5120pF @ 10V 4V, 10V ±20V
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