Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQPF8N80C
Per Unit
$1.26
RFQ
25,200
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 800V 8A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 59W (Tc) N-Channel - 800V 8A (Tc) 1.55 Ohm @ 4A, 10V 5V @ 250µA 45nC @ 10V 2050pF @ 25V 10V ±30V
FQPF8N90C
Per Unit
$1.18
RFQ
51,740
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 900V 6.3A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 60W (Tc) N-Channel - 900V 6.3A (Tc) 1.9 Ohm @ 3.15A, 10V 5V @ 250µA 45nC @ 10V 2080pF @ 25V 10V ±30V
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