Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STP60NF06FP
Per Unit
$0.59
RFQ
43,040
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 60V 30A TO220FP STripFET™ II Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 60V 30A (Tc) 16 mOhm @ 30A, 10V 4V @ 250µA 66nC @ 10V 1810pF @ 25V 10V ±20V
IPA60R125C6XKSA1
Per Unit
$2.71
RFQ
34,640
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 600V 30A TO220-FP CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO-220-FP 34W (Tc) N-Channel - 600V 30A (Tc) 125 mOhm @ 14.5A, 10V 3.5V @ 960µA 96nC @ 10V 2127pF @ 100V 10V ±20V
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