4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIHA4N80E-GE3
Per Unit
$1.23
RFQ
72,020
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Vishay Siliconix MOSFET N-CHAN 800V FP TO-220 E Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 69W (Tc) N-Channel 800V 4.3A (Tc) 1.27 Ohm @ 2A, 10V 4V @ 250µA 32nC @ 10V 622pF @ 100V 10V ±30V
FQPF18N50V2
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RFQ
66,860
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ON Semiconductor MOSFET N-CH 500V 18A TO-220F QFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 69W (Tc) N-Channel 500V 18A (Tc) 265 mOhm @ 9A, 10V 5V @ 250µA 55nC @ 10V 3290pF @ 25V 10V ±30V
TSM60NB099CF C0G
Per Unit
$2.29
RFQ
19,480
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Taiwan Semiconductor Corporation MOSFET N-CH 600V 38A ITO220S - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack ITO-220S 69W (Tc) N-Channel 600V 38A (Tc) 99 mOhm @ 5.3A, 10V 4V @ 250µA 62nC @ 10V 2587pF @ 100V 10V ±30V
TSM80N400CF C0G
Per Unit
$2.12
RFQ
16,960
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Taiwan Semiconductor Corporation MOSFET N-CH 800V 12A ITO220S - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack ITO-220S 69W (Tc) N-Channel 800V 12A (Tc) 400 mOhm @ 2.7A, 10V 4V @ 250µA 51nC @ 10V 1848pF @ 100V 10V ±30V
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